LIUDVICHENKO, O.; LYESHCHUK, O.; ANISIN, O. Modeling of the precursor configuration influence on the thermoelectric parameters of the high-pressure apparatus during GaN recrystallization from the Fe–Ga–N system. Mechanics and Advanced Technologies, Kyiv, Ukraine, v. 9, n. 1(104), p. 59–63, 2025. DOI: 10.20535/2521-1943.2025.9.1(104).322233. Disponível em: https://journal.mmi.kpi.ua/article/view/322233. Acesso em: 2 apr. 2025.