Finite element analysis of electroresistive heating of a high pressure apparatus for studying the solubility of GaN in Fe

Authors

  • Oleksiy Liudvichenko Bakul Institute for Superhard Materials NASU, Ukraine
  • Oleksandr Anisin Bakul Institute for Superhard Materials NASU, Ukraine
  • Oleksandr Lyeshchuk Bakul Institute for Superhard Materials NASU, Kyiv, Ukraine
  • Vitaliy Shchydlovskyi Bakul Institute for Superhard Materials NASU, Kyiv, Ukraine

DOI:

https://doi.org/10.20535/2521-1943.2021.5.3.240310

Keywords:

gallium nitride, high pressure apparatus, high pressure cell, finite element method

Abstract

The advantages and disadvantages of methods for gallium nitride crystals production are considered. The convergence of the solution of the problem of electroresistive heating at determination of a thermal condition of the high pressure apparatus cell is investigated. The thermal state of the high pressure apparatus cell used to determine the solubility of gallium nitride in iron has been modeled and investigated. It is determined that the combined discretization with the use of triangular and quadrangular elements allows to reduce the time of solving the coupled problem of electrical and thermal conductivity under these conditions. The results of calculations are presented by steady temperature fields in various elements of the device. It was obtained that at the temperature in the cell control point of 1800 °С its axial difference in the volume of the investigated sample of iron was 62 °С , the maximum difference was 156 °С. The simulated cell configuration and the heating conditions defined for it are acceptable for experimental studies of the solubility of GaN in contact with Fe under conditions of high pressures and temperatures.

References

  1. H. Fujikura et al., “Recent progress of high-quality GaN substrates by HVPE method”, in Proc. of SPIE, San Francisco, California, United States. 2017, 10104–1010403. https://doi.org/10.1117/12.2257202
  2. A.A. Leshchuk, “Raschet raspredelenii temperatury v reaktsionnoi yacheike AVD pri kristallizatsii nitrida galliya”, Sintez, spekanie i svoistva sverkhtverdykh materialov, Kyiv: In-t sverkhtv. materialov im. V.N. Bakulya NAN Ukrainy, pp. 158–171, 2000.
  3. A.S. Okhotina, Teploprovodnost' tverdykh tel: Sprav, Moscow: Energoatomizdat, 1984.
  4. V.P. Sosedov, Svoistva konstruktsionnykh materialov na osnove ugleroda: Sprav, Moscow: Metallurgiya, 1975.
  5. V.I. Tumanov, Svoistva splavov sistemy karbid vol'frama – kobal't: Sprav, Moscow: Metallurgiya, 1971.
  6. G.V. Samsonova, Fiziko-khimicheskie svoistva okislov: Sprav, Moscow: Metallurgiya, 1978.
  7. Cui He, Cui-E Hu, Tian Zhang et al., “Lattice dynamics and thermal conductivity of cesium chloride via first-principles investigation”, Solid State Commun, 2017, Vol. 254, pp. 31–36. https://doi.org/10.1016/j.ssc.2016.12.004
  8. L.P. Khoroshun and B.P. Maslov, Metody avtomatizirovannogo rascheta fiziko-mekhanicheskikh postoyannykh kompozitsionnykh materialov, Kyiv: Nauk. dumka, 1980.
  9. O. Lyeshchuk, “Computational modeling of superhard materials synthesis”, Comp. Mater. Sci., 2010, Vol. 49, Issue. 1, pp. 85–94. https://doi.org/10.1016/j.commatsci.2010.01.047
  10. O.O. Lyeshchuk, S.B. Polotniak, M.V. Novikov, Thermomechanical approach to the modeling of HP–HT material processing J. Phys. Conf. Ser. 2012. 377. Art. 012095. https://doi.org/10.1088/1742-6596/377/1/012095

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Published

2021-12-27

How to Cite

[1]
O. Liudvichenko, O. Anisin, O. Lyeshchuk, and V. Shchydlovskyi, “Finite element analysis of electroresistive heating of a high pressure apparatus for studying the solubility of GaN in Fe”, Mech. Adv. Technol., vol. 5, no. 3, pp. 302–306, Dec. 2021.

Issue

Vol. 5 No. 3 (2021)

Section

Mechanics

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Copyright (c) 2021 Олексій Людвіченко, Олександр Анісін, Олександр Лєщук, Віталій Щидловський

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