Finite element analysis of electroresistive heating of a high pressure apparatus for studying the solubility of GaN in Fe

Authors

  • Oleksiy Liudvichenko Bakul Institute for Superhard Materials NASU, Ukraine
  • Oleksandr Anisin Bakul Institute for Superhard Materials NASU, Ukraine
  • Oleksandr Lyeshchuk Bakul Institute for Superhard Materials NASU, Kyiv, Ukraine
  • Vitaliy Shchydlovskyi Bakul Institute for Superhard Materials NASU, Kyiv, Ukraine

DOI:

https://doi.org/10.20535/2521-1943.2021.5.3.240310

Keywords:

gallium nitride, high pressure apparatus, high pressure cell, finite element method

Abstract

The advantages and disadvantages of methods for gallium nitride crystals production are considered. The convergence of the solution of the problem of electroresistive heating at determination of a thermal condition of the high pressure apparatus cell is investigated. The thermal state of the high pressure apparatus cell used to determine the solubility of gallium nitride in iron has been modeled and investigated. It is determined that the combined discretization with the use of triangular and quadrangular elements allows to reduce the time of solving the coupled problem of electrical and thermal conductivity under these conditions. The results of calculations are presented by steady temperature fields in various elements of the device. It was obtained that at the temperature in the cell control point of 1800 °С its axial difference in the volume of the investigated sample of iron was 62 °С , the maximum difference was 156 °С. The simulated cell configuration and the heating conditions defined for it are acceptable for experimental studies of the solubility of GaN in contact with Fe under conditions of high pressures and temperatures.

References

  1. H. Fujikura, T. Yoshida, M. Shibata and Y. Otoki, “Recent progress of high-quality GaN substrates by HVPE method”, in Proceedings of SPIE Volume 10104, Gallium Nitride Materials and Devices XII, San Francisco, California, United States, 2017, vol. 10104, p. 1010403. DOI: https://doi.org/10.1117/12.2257202.
  2. A. A. Leshchuk, “Raschet raspredeleniya temperatury v reaktsionnoy yacheyke AVD pri kristallizatsii nitrida galliya”, in Sintez, spekaniye i svoystva sverkhtverdykh materialov. Kyiv: Institut sverkhtverdykh materialov im. V. N. Bakulya, 2000, pp. 158–171.
  3. Teploprovodnost' tverdykh tel: Spravochnik, A. S. Okhotin (ed.). Moscow: Energoatomizdat, 1984, 320 p.
  4. Svoystva konstruktsionnykh materialov na osnove ugleroda: spravochnik, V.P. Sosedov (ed.). Moscow: Metallurgiya, 1975. 335 p.
  5. V. I. Tumanov, Svoystva splavov sistemy karbid vol'frama-kobal't. Moscow: Metallurgiya, 1971, 95 p.
  6. Fiziko-khimicheskiye svoystva okislov: Spravochnik, G. V. Samsonov (ed.). Moscow: Metallurgiya, 1978, 472 p.
  7. C. He, C.-E. Hu, T. Zhang, Y.-Y. Qi and X.-R. Chen, “Lattice dynamics and thermal conductivity of cesium chloride via first-principles investigation”, Solid State Communications, vol. 254, pp. 31–36, 2017. DOI: https://doi.org/10.1016/j.ssc.2016.12.004.
  8. L. P. Khoroshun and B. P. Maslov, Metody avtomatizirovannogo rascheta fiziko-mekhanicheskikh postoyannykh kompozitsionnykh materialov. Kyiv: Naukova dumka, 1980, 156 p.
  9. O. Lyeshchuk, “Computational modeling of superhard materials synthesis”, Computational Materials Science, vol. 49, no. 1 (Supplement), pp. S85–S94, 2010. DOI: https://doi.org/10.1016/j.commatsci.2010.01.047.
  10. O. O. Lyeshchuk, S. B. Polotniak and M. V. Novikov, "Thermomechanical approach to the modeling of HP–HT material processing", Journal of Physics: Conference Series, vol. 377, no 1, p. 012095, 2012. DOI: https://doi.org/10.1088/1742-6596/377/1/012095.

Downloads

Published

2021-12-27

How to Cite

[1]
O. Liudvichenko, O. Anisin, O. Lyeshchuk, and V. Shchydlovskyi, “Finite element analysis of electroresistive heating of a high pressure apparatus for studying the solubility of GaN in Fe”, Mech. Adv. Technol., vol. 5, no. 3, pp. 302–306, Dec. 2021.

Issue

Vol. 5 No. 3 (2021)

Section

Mechanics

License

Copyright (c) 2021 Олексій Людвіченко, Олександр Анісін, Олександр Лєщук, Віталій Щидловський

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

The ownership of copyright remains with the Authors.
 
Authors may use their own material in other publications provided that the Journal is acknowledged as the original place of publication and National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute” as the Publisher.

Authors who publish with this journal agree to the following terms:

  1. Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under CC BY 4.0 that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.

  2. Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.

  3. Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work